Green photoluminescence from Zn3N2:Tb films prepared by magnetron sputtering.

Terbium (Tb)-doped Zn₃N₂ thin films were prepared on glass and Si substrates by direct current magnetron sputtering in a mixture of pure argon and nitrogen gases. Glancing incidence x-ray diffraction patterns indicated that Zn₃N₂:Tb thin films were of cubic structure. Raman spectra showed only two Raman-active phonon modes located at 258 and 565 cm^-1. The indirect optical band gap of Zn₃N₂:Tb was determined as 2.4 eV. The sharp characteristic emission lines corresponding to Tb³⁺ intra-4f shell transitions were resolved in the photoluminescence spectra at room temperature. Those results suggest that Tb-doped Zn₃N₂ may be a suitable material for visible optoelectronic devices. [ABSTRACT FROM AUTHOR]