Contrast mechanism due to interface trapped charges for a buried SiO2 microstructure in scanning electron microscopy.

MLA

Hai-Bo Zhang, et al. “Contrast Mechanism Due to Interface Trapped Charges for a Buried SiO2 Microstructure in Scanning Electron Microscopy.” Journal of Electron Microscopy, vol. 58, no. 1, Jan. 2009, p. 15. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edb&AN=36177085&authtype=sso&custid=ns315887.

APA

Hai-Bo Zhang, Wei-Qin Li, & Dan-Wei Wu. (2009). Contrast mechanism due to interface trapped charges for a buried SiO2 microstructure in scanning electron microscopy. Journal of Electron Microscopy, 58(1), 15.

Chicago

Hai-Bo Zhang, Wei-Qin Li, and Dan-Wei Wu. 2009. “Contrast Mechanism Due to Interface Trapped Charges for a Buried SiO2 Microstructure in Scanning Electron Microscopy.” Journal of Electron Microscopy 58 (1): 15. http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edb&AN=36177085&authtype=sso&custid=ns315887.