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High tunneling magnetoresistance in Fe/GaOx/Ga1-xMnxAs with metal/insulator/semiconductor structure.
- Source :
- Applied Physics Letters; 10/27/2008, Vol. 93 Issue 17, p172515, 3p, 3 Black and White Photographs, 2 Graphs
- Publication Year :
- 2008
-
Abstract
- We fabricated Fe/GaO<subscript>x</subscript>/Ga<subscript>1-x</subscript>Mn<subscript>x</subscript>As magnetic tunnel diodes that had a metal/insulator/semiconductor (MIS) structure. A tunneling magnetoresistance (TMR) ratio up to 58% was observed, which is the highest value yet reported in MIS-type TMR devices. This indicates that GaO<subscript>x</subscript> is an excellent tunnel-barrier material for spin-dependent transport between 3d-ferromagnetic metal and GaAs-based semiconductors. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 93
- Issue :
- 17
- Database :
- Complementary Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 35279048
- Full Text :
- https://doi.org/10.1063/1.3013327