Origin of multiple peak photoluminescence in InGaN/GaN multiple quantum wells.

Authors :: Pozina[a], G.
Bergman, J. P.
Monemar, B.
Takeuchi, T.
Amano, H.
Akasaki, I.
Source :: Journal of Applied Physics; 9/1/2000, Vol. 88 Issue 5, p2677, 5p, 2 Black and White Photographs, 7 Graphs
Publication Year :: 2000
Abstract: Elucidates the nature of the recombination mechanisms responsible for the radiative transitions in InGaN/GaN multiple quantum wells (MQW) grown by metalorganic vapor phase epitaxy at 820 degree centigrade. Dominance of a strong multiple peak emissions associating with both confined levels of the MQW system; Origin of the photoluminescence from the MQW exciton recombination.