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Properties of MIS Capacitors Using the Atomic-Layer-Deposited ZnO Semiconductor and Al2O3 Insulator.
- Source :
- Journal of The Electrochemical Society; 2008, Vol. 155 Issue 11, pH858-H863, 6p, 2 Diagrams, 7 Graphs
- Publication Year :
- 2008
Details
- Language :
- English
- ISSN :
- 00134651
- Volume :
- 155
- Issue :
- 11
- Database :
- Complementary Index
- Journal :
- Journal of The Electrochemical Society
- Publication Type :
- Academic Journal
- Accession number :
- 34997344
- Full Text :
- https://doi.org/10.1149/1.2971024