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Reversible change in electrical and optical properties in epitaxially grown Al-doped ZnO thin films.
- Source :
- Journal of Applied Physics; Oct2008, Vol. 104 Issue 7, p073706, 5p, 1 Chart, 3 Graphs
- Publication Year :
- 2008
-
Abstract
- Aluminum-doped ZnO (AZO) films were epitaxially grown on sapphire (0001) substrates using pulsed laser deposition. As-deposited AZO films had a low resistivity of 8.01×10<superscript>-4</superscript> Ω cm. However, after annealing at 450 °C in air, the electrical resistivity of the AZO films increased to 1.97×10<superscript>-1</superscript> Ω cm because of a decrease in the carrier concentration. Subsequent annealing of the air-annealed AZO films in H<subscript>2</subscript> recovered the electrical conductivity of the AZO films. In addition, the conductivity change was reversible upon repeated air and H<subscript>2</subscript> annealing. A photoluminescence study showed that oxygen interstitial (O<subscript>i</subscript><superscript>′</superscript>) is a critical material parameter allowing for the reversible control of the electrical conducting properties of AZO films. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 104
- Issue :
- 7
- Database :
- Complementary Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 34829202
- Full Text :
- https://doi.org/10.1063/1.2987472