Improvement of light extraction from high-power flip-chip light-emitting diodes by femtosecond laser direct structuring of the sapphire backside surface.

We report on the structuring of the backside surface of sapphire substrates in high-power flip-chip light-emitting diodes (LEDs) by femtosecond laser direct writing. Varying the laser powers has been found to affect the sizes of the inscribed patterns on a submicron scale which facilitates the control of the structure sizes with high precision. Accordingly, since on the one hand the light extraction efficiency reveals a strong dependence on pattern sizes, and on the other hand, femtosecond laser structuring provides a simple opportunity to inscribe diverse structures along the LED surfaces, LEDs with laterally controlled light extraction efficiencies can be fabricated. [ABSTRACT FROM AUTHOR]