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Suppression of the subband parasitic peak by 1 nm i-AlN interlayer in AlGaN deep ultraviolet light-emitting diodes.

Authors :
Zhang, J. C.
Zhu, Y. H.
Egawa, T.
Sumiya, S.
Miyoshi, M.
Tanaka, M.
Source :
Applied Physics Letters; 9/29/2008, Vol. 93 Issue 13, p131117, 3p, 1 Diagram, 1 Chart, 3 Graphs
Publication Year :
2008

Abstract

The origin and suppression of the subband parasitic peak in AlGaN deep ultraviolet light-emitting diodes have been studied. The parasitic peak is clarified to come from a p-AlGaN cladding layer and to be related to Mg dopants. By using 1 nm i-AlN as an interlayer between the active region and the p-AlGaN cladding layer, this peak is suppressed efficiently. The devices with such an interlayer show improved output power by a factor of 4 at injection current density of 20 A/cm<superscript>2</superscript>, except that the series resistance and turn-on voltage are slightly increased. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00036951
Volume :
93
Issue :
13
Database :
Complementary Index
Journal :
Applied Physics Letters
Publication Type :
Academic Journal
Accession number :
34771872
Full Text :
https://doi.org/10.1063/1.2996580