Back to Search
Start Over
A Quad-Band GSMIEDGE-Compliant SiGe-Bipolar Power Amplifier.
- Source :
- IEEE Journal of Solid-State Circuits; Sep2008, Vol. 43 Issue 9, p1920-1930, 11p, 18 Black and White Photographs, 5 Diagrams, 9 Graphs
- Publication Year :
- 2008
-
Abstract
- A standard-compliant integrated quad-band GSM/EDGE radio frequency power amplifier for 824-915 MHz and 1710-1910 MHz has been realized in a 0.35-pm SiGe-Bipolar technology. The chip integrates two single-ended three-stage power amplifiers and control circuitry for band-select, power loop control and mode dependent quiescent currents. For power control, an on-chip voltage regulation loop is implemented, using an external P-channel MOS-transistor on a laminate module. At 3.3 V a saturated output power of 35.9 dBm is achieved at 830 MHz and 32.3 dBm at 1710 MHz. The respective peak power added efficiency (PAE) is 56% for low-band and 44% for high-band. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189200
- Volume :
- 43
- Issue :
- 9
- Database :
- Complementary Index
- Journal :
- IEEE Journal of Solid-State Circuits
- Publication Type :
- Academic Journal
- Accession number :
- 34577584
- Full Text :
- https://doi.org/10.1109/JSSC.2008.2002337