Back to Search
Start Over
Ion beam deposition of tantalum pentoxide thin film at room temperature.
- Source :
- Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films; Jul2008, Vol. 26 Issue 4, p991-995, 5p, 1 Black and White Photograph, 1 Diagram, 1 Chart, 5 Graphs
- Publication Year :
- 2008
-
Abstract
- Tantalum pentoxide (Ta<subscript>2</subscript>O<subscript>5</subscript>) thin films have been deposited by reactive ion beam sputtering at room temperature. The films have been characterized by scanning electron microscopy, atomic force microscopy, x-ray photoelectron spectroscopy (XPS), Fourier transform infrared spectroscopy (FTIR), variable angle ellipsometry, and UV-VIS spectroscopy. The main parameter varied was the oxygen partial pressure. Stoichiometry is reached for p<subscript>O</subscript>>=3×10<superscript>-2</superscript> Pa; within the limit of XPS (∼1%) the films are free of contaminations. They are extremely smooth with a surface roughness of 0.14 nm only. From FTIR, it can be concluded that they are amorphous. For stoichiometric Ta<subscript>2</subscript>O<subscript>5</subscript> films, the refractive index at 532 nm is in the range from 2.05 to 2.2, while the extinction coefficient is below the detection limit of our ellipsometer. UV-VIS spectra show stoichiometric films to possess a high transmission in a wide wavelength range with an absorption edge below 300 nm. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 07342101
- Volume :
- 26
- Issue :
- 4
- Database :
- Complementary Index
- Journal :
- Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films
- Publication Type :
- Academic Journal
- Accession number :
- 34360840
- Full Text :
- https://doi.org/10.1116/1.2832407