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Oxidation of silicon-germanium alloys. I. An experimental study.
- Source :
- Journal of Applied Physics; 12/1/1997, Vol. 82 Issue 11, p5773, 6p, 6 Graphs
- Publication Year :
- 1997
-
Abstract
- Examines the oxidation of polycrystalline SixGe1-x films with different compositions in pyrogenic steam for various lengths of time. Enhancement of oxidation by the presence of germanium; Rejection of germanium; Piling up of germanium at the interface between the growing SiO2 and the remaining SixGe1-x; Interdiffusion of silicon and germanium.
- Subjects :
- POLYCRYSTALLINE semiconductors
PYROGENS
GERMANIUM
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 82
- Issue :
- 11
- Database :
- Complementary Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 34166
- Full Text :
- https://doi.org/10.1063/1.366443