High-Performance Metal-Induced Laterally Crystallized Polycrystalline Silicon P-Channel Thin-Film Transistor With TaN/HfO2.

In this letter, high-performance low-temperature poly-Si p-channel thin-film transistor with metal-induced lateral- crystallization (MILC) channel layer and TaN/HfO2 gate stack is demonstrated for the first time. The devices of low thresh- old voltage V_TH ~ 0.095 V, excellent subthreshold swing S.S. ~83 mV/dec., and high field-effect mobility μ5FE ~ 240 cm² /V · s are achieved without any defect passivation methods. These significant improvements are due to the MILC channel film and the very high gate-capacitance density provided by HfO₂ gate dielectric with the effective oxide thickness of 5.12 nm. [ABSTRACT FROM AUTHOR]