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Electron mobility and charge correlation in silicon doped GaAs-AlAs short period superlattices.
- Source :
- Journal of Applied Physics; 8/1/2000, Vol. 88 Issue 3, p1515, 5p, 2 Diagrams, 3 Graphs
- Publication Year :
- 2000
-
Abstract
- Investigates the electron mobility as a function of the carrier concentration mu(n) in a silicon doped GaAs-AlAs short period superlattice at the temperature of liquid nitrogen. Tuning of the metastable electron density; Influence of charge correlations on the mobility.
- Subjects :
- SUPERLATTICES
ELECTRON mobility
ELECTRONICS
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 88
- Issue :
- 3
- Database :
- Complementary Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 3396976
- Full Text :
- https://doi.org/10.1063/1.373848