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Diffusion of Ge in Si1-xGex/Si single quantum wells in inert and oxidizing ambients.
- Source :
- Journal of Applied Physics; 8/1/2000, Vol. 88 Issue 3, p1366, 7p, 1 Black and White Photograph, 2 Diagrams, 3 Charts, 4 Graphs
- Publication Year :
- 2000
-
Abstract
- Studies the interdiffusion of Si/Si0.85Ge0.15/Si single quantum well structures subjected to inert- and oxidizing-ambient annealing. Extraction of diffusion coefficients; Similarity in diffusion profiles of samples processed.
- Subjects :
- QUANTUM wells
DIFFUSION
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 88
- Issue :
- 3
- Database :
- Complementary Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 3396528
- Full Text :
- https://doi.org/10.1063/1.373825