High mobility electron-conducting thin-film transistors by organic vapor phase deposition.

In this letter, we report on the growth of thin films of N,N^′-ditridecylperylene-3,4,9,10-tetracarboxylic diimide (PTCDI-C₁₃H₂₇) by organic vapor phase deposition (OVPD). Uniform films are deposited with a material utilization efficiency of 59±4% and deposition rates up to 15 Å/s. Top-contact transistors based on OVPD-grown PTCDI-C₁₃H₂₇ show high n-type mobilities (up to 0.3 cm²/V s) and reproducible characteristics. The influence of deposition parameters on electrical properties is discussed. [ABSTRACT FROM AUTHOR]