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40 MHz IF 1 MHz Bandwidth Two-Path Bandpass ΣΔ Modulator With 72 dB DR Consuming 16 mW.

Authors :
Galdi, Ivano
Bonizzoni, Edoardo
Malcovati, Piero
Manganaro, Gabriele
Maloberti, Franco
Source :
IEEE Journal of Solid-State Circuits; Jul2008, Vol. 43 Issue 7, p1648-1656, 9p, 4 Black and White Photographs, 10 Diagrams, 3 Charts, 4 Graphs
Publication Year :
2008

Abstract

A bandpass ΣΔ modulator with two time-interleaved second-order modulators and cross-coupled paths is described. Split zeros around the 40 MHz IF provide a signal band of! MHz with 72 dB<superscript>FS</superscript> DR and 65.1 dB peak SNR. The circuit, integrated in a 0.18 μm CMOS technology, uses a 60 MHz clock per channel. Experimental results show that the in-band region is not affected by tones caused by mismatches and that a two-tones input causes an IMD signal of 68 dB<subscript>c</subscript>. The power consumption is 16 mW with 1.8 V supply. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00189200
Volume :
43
Issue :
7
Database :
Complementary Index
Journal :
IEEE Journal of Solid-State Circuits
Publication Type :
Academic Journal
Accession number :
33113723
Full Text :
https://doi.org/10.1109/JSSC.2008.923728