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40 MHz IF 1 MHz Bandwidth Two-Path Bandpass ΣΔ Modulator With 72 dB DR Consuming 16 mW.
- Source :
- IEEE Journal of Solid-State Circuits; Jul2008, Vol. 43 Issue 7, p1648-1656, 9p, 4 Black and White Photographs, 10 Diagrams, 3 Charts, 4 Graphs
- Publication Year :
- 2008
-
Abstract
- A bandpass ΣΔ modulator with two time-interleaved second-order modulators and cross-coupled paths is described. Split zeros around the 40 MHz IF provide a signal band of! MHz with 72 dB<superscript>FS</superscript> DR and 65.1 dB peak SNR. The circuit, integrated in a 0.18 μm CMOS technology, uses a 60 MHz clock per channel. Experimental results show that the in-band region is not affected by tones caused by mismatches and that a two-tones input causes an IMD signal of 68 dB<subscript>c</subscript>. The power consumption is 16 mW with 1.8 V supply. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189200
- Volume :
- 43
- Issue :
- 7
- Database :
- Complementary Index
- Journal :
- IEEE Journal of Solid-State Circuits
- Publication Type :
- Academic Journal
- Accession number :
- 33113723
- Full Text :
- https://doi.org/10.1109/JSSC.2008.923728