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A quantitative analytical model for static dipolar disorder broadening of the density of states at organic heterointerfaces.
- Source :
- Journal of Chemical Physics; 6/21/2008, Vol. 128 Issue 23, p234906, 5p, 3 Graphs
- Publication Year :
- 2008
-
Abstract
- Understanding the electronic structure of organic-organic heterointerfaces is crucial for many device applications of organic semiconductors. Here we have developed a simple analytical model to describe the effect of static dipolar disorder in a polymer dielectric on the density of states of an adjacent organic semiconductor. The degree of energetic disorder varies strongly with distance from the interface. Using a simple mobility model, we have been able to explain quantitatively both the magnitude as well as the gate voltage dependence of the field-effect mobility for polymer gate dielectrics with different dielectric constants. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00219606
- Volume :
- 128
- Issue :
- 23
- Database :
- Complementary Index
- Journal :
- Journal of Chemical Physics
- Publication Type :
- Academic Journal
- Accession number :
- 32841918
- Full Text :
- https://doi.org/10.1063/1.2937729