Passivating gallium arsenide surface by gallium chalcogenide.

Authors :: Bezryadin, N. N.
Kotov, G. I.
Kuzubov, S. V.
Arsent'ev, I. N.
Tarasov, I. S.
Starodubtsev, A. A.
Sysoev, A. B.
Source :: Technical Physics Letters; May2008, Vol. 34 Issue 5, p428-430, 3p, 2 Diagrams, 1 Graph
Publication Year :: 2008
Abstract: We have studied the protective properties of thin films of gallium selenide formed by the method of heterovalent substitution on the surface of GaAs substrates. The data of transmission (Hitachi H-800) and scanning (JEOL JSM-638 OLV) electron microscopy showed that GaAs substrates treated with selenium vapor produced a more pronounced orienting action on the subsequent deposition of GaAs as compared to the substrates covered with a natural oxide. The processing of a GaAs substrate in selenium vapor followed by the removal of the resulting Ga<subscript>2</subscript>Se<subscript>3</subscript> layer increases the degree of smoothness of the substrate surface on the atomic level. [ABSTRACT FROM AUTHOR]