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Bulk crystal growth and efficient diode-pumped laser performance of Yb3+:Sc2SiO5.
- Source :
- Applied Physics B: Lasers & Optics; Jun2008, Vol. 91 Issue 3/4, p443-445, 3p, 1 Color Photograph, 2 Charts, 3 Graphs
- Publication Year :
- 2008
-
Abstract
- A bulk crystal of Yb:Sc<subscript>2</subscript>SiO<subscript>5</subscript> (Yb:SSO) with favorable thermal properties was successfully obtained by the Czochralski method. The energy level diagrams for Yb:SSO crystal were determined by optical spectroscopic analysis and semi-empirical crystal-field calculations using the simple overlap model. The full width at half maximum of the absorption band centering at 976 nm was calculated to be 24 nm with a peak absorption cross-section of 9.2×10<superscript>-21</superscript> cm<superscript>2</superscript>. The largest ground-state splitting of Yb<superscript>3+</superscript> ions is up to 1027 cm<superscript>-1</superscript> in a SSO crystal host. Efficient diode-pumped laser performance of Yb:SSO was primarily demonstrated with a slope efficiency of 45% and output power of 3.55 W. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 09462171
- Volume :
- 91
- Issue :
- 3/4
- Database :
- Complementary Index
- Journal :
- Applied Physics B: Lasers & Optics
- Publication Type :
- Academic Journal
- Accession number :
- 32154796
- Full Text :
- https://doi.org/10.1007/s00340-008-3021-7