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Improvement of n-channel metal-oxide-semiconductor transistors by tensile stress despite increase in both on and subthreshold off currents.
- Source :
- Journal of Applied Physics; May2008, Vol. 103 Issue 9, p094518, 12p, 1 Diagram, 4 Charts, 18 Graphs
- Publication Year :
- 2008
-
Abstract
- We found that tensile stress actually increases both the on current and the subthreshold off current for n-channel metal-oxide-semiconductor transistors because of an increase in mobility. Our theory is that stress engineering works because the increase in the subthreshold off current can be easily offset by a slight increase in the saturation threshold voltage, while the increase in the on current can be offset only by a much larger increase in the saturation threshold voltage. In this paper, experimental variation in the saturation threshold voltage is achieved by the statistical variation in gate length and short-channel effect. Thus, the overall effect is an improvement. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 103
- Issue :
- 9
- Database :
- Complementary Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 32078890
- Full Text :
- https://doi.org/10.1063/1.2906345