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Theoretical and Experimental Characterization of Self-Heating in Silicon Integrated Devices Operating at Low Temperatures.
- Source :
- IEEE Transactions on Electron Devices; May2000, Vol. 47 Issue 5, p1098, 9p, 3 Black and White Photographs, 2 Diagrams, 8 Graphs
- Publication Year :
- 2000
-
Abstract
- Provides information on a study which discussed the self-heating of silicon devices operating in the 4K < T < 300 K range. Relaxation times at low temperatures; Calculation of the temperature rise; Experimental characterization of the temperature rise; Conclusions.
- Subjects :
- SILICON
TEMPERATURE
LOW temperatures
Subjects
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 47
- Issue :
- 5
- Database :
- Complementary Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 3183209
- Full Text :
- https://doi.org/10.1109/16.841246