Effect of Co-doping on Microstructural, Crystal Structure and Optical Properties of Ti1-xCOxO2 Thin films Deposited on Si Substrate by MOCVD Method.

Ti_1-xCO_xO₂ thin films have been grown on n-type Si(100) substrates by metal organic vapor deposition (MOCVD) using titanium (IV) isopropoxide (TTIP) and tris (2,2,6,6-tetramethyl-3, 5-heptanedionato) cobalt (III) as metal organic precursors. The parameter deposition, such as: bubbler temperature of TTIP T_b(Ti) = 50 °C; substrate temperature T_s = 450 °C; bubbler pressure P_b(Ti) = 260 Torr; flow rate of Ar gas through TTIP precursor Ar(Ti) = 100 sccm (standard cubic centimeters per minute) and flow rate of oxygen gas O₂ = 60 sccm were found as optimal deposition parameters. The thin films deposited were have rutile (002) crystal plane, whereas those deposited at other parameter were mixing of anatase and rutile phases. Co dopant with concentration of up to 5.77% was not changes the structure of TiO₂. Increase of Co incorporated in thin films was decreasing of band-gap energy. [ABSTRACT FROM AUTHOR]