NEGATIVE AND POSITIVE MAGNETORESISTIVITY BEHAVIOURS AT VERY LOW TEMPERATURES IN THE VARIABLE RANGE HOPPING REGIME IN INSULATING N-TYPE INP SEMICONDUCTOR.

MLA

El kaaouachi, A., et al. “Negative and Positive Magnetoresistivity Behaviours at Very Low Temperatures in the Variable Range Hopping Regime in Insulating N-Type Inp Semiconductor.” AIP Conference Proceedings, vol. 986, no. 1, Mar. 2008, pp. 18–26. EBSCOhost, https://doi.org/10.1063/1.2900344.

APA

El kaaouachi, A., Abdia, R., Nafidi, A., Hemine, J., & Biskupski, G. (2008). Negative and Positive Magnetoresistivity Behaviours at Very Low Temperatures in the Variable Range Hopping Regime in Insulating N-Type Inp Semiconductor. AIP Conference Proceedings, 986(1), 18–26. https://doi.org/10.1063/1.2900344

Chicago

El kaaouachi, A., R. Abdia, A. Nafidi, J. Hemine, and G. Biskupski. 2008. “Negative and Positive Magnetoresistivity Behaviours at Very Low Temperatures in the Variable Range Hopping Regime in Insulating N-Type Inp Semiconductor.” AIP Conference Proceedings 986 (1): 18–26. doi:10.1063/1.2900344.