Study of Hall and effective mobilities in pseudomorphic Si1-xGex p-channel metal-oxide...

Authors :: Lander, R.J.P.
Emeleus, C.J.
McGregor, B. M.
Parker, E. H. C.
Whall, T. E.
Evans, A. G. R.
Kennedy, G. P.
Source :: Journal of Applied Physics; 11/15/1997, Vol. 82 Issue 10, p5210, 7p, 1 Black and White Photograph, 1 Diagram, 1 Chart, 9 Graphs
Publication Year :: 1997
Abstract: Studies several Si0.8 Ge0.2 p-channel heterostructures with self-aligned ply-Si metal-oxide-semiconductor gates. Complementary-MOS performance by the low p0MOS field-effect-transistor hole mobility; Development of a fabrication process which has allowed the characterization of a fully pseudomorphic Si/SiGe p-MOS structure from 4.2 K to room temperature.

Subjects :: METAL oxide semiconductors
FIELD-effect transistors
HETEROSTRUCTURES

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