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Structural and electrical properties of p+n junctions in Si by low energy Ga+ implantation.
- Source :
- Journal of Applied Physics; 11/15/1997, Vol. 82 Issue 10, p4990, 4p, 1 Chart, 4 Graphs
- Publication Year :
- 1997
-
Abstract
- Examines structural and electrical properties of p+n junctions in silicon by low energy Ga+ implantation. Use of high resolution secondary ion mass spectroscopy; Implantation of molecular species; Annealing data; Sensitivity of the electrical properties of the p+n junctions and its improvement with increasing dose.
- Subjects :
- ELECTRIC properties of silicon
HIGH resolution spectroscopy
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 82
- Issue :
- 10
- Database :
- Complementary Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 295143
- Full Text :
- https://doi.org/10.1063/1.366367