Raman-scattering criteria for characterization of anneal-restored zinc blende single crystals...

Authors :: Artús, L.
Cuscó, R.
Ibáñez, J.
Martin, J. M.
González-Díaz, G.
Source :: Journal of Applied Physics; 10/15/1997, Vol. 82 Issue 8, p3736, 4p, 4 Graphs
Publication Year :: 1997
Abstract: Studies the lattice recovery by rapid thermal annealing of Si+-implanted InP using Raman spectroscopy. Implantation by means of Raman spectra; Alteration of free-charge coupling with the LO mode; Possible misorientation of the recrystallized material; Analysis of the first order spectrum.

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