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Photoccurent study of molecular beam epitaxy GaAx grown at low temperature.
- Source :
- Journal of Applied Physics; 3/1/2000, Vol. 87 Issue 5, p2353, 4p, 4 Graphs
- Publication Year :
- 2000
-
Abstract
- Provides information on a study which proposed models for the high resistivity of annealed low temperature-gallium arsenide. Samples used in the experiment; Results and discussion.
- Subjects :
- GALLIUM
ARSENIC
MOLECULAR beam epitaxy
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 87
- Issue :
- 5
- Database :
- Complementary Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 2882407
- Full Text :
- https://doi.org/10.1063/1.372186