Electrical Switching in TlSbSe2 Chalcogenide Semiconductors.

Authors :: Kalkan, N.
Yildirim, S.
Ulutas, K. Ulutas
Deger, D.
Source :: Journal of Electronic Materials; Feb2008, Vol. 37 Issue 2, p157-160, 4p, 5 Graphs
Publication Year :: 2008
Abstract: Electrical measurements were performed on TlSbSe<subscript>2</subscript> ternary crystals in the temperature range 293-413 K. The obtained I-V characteristics consist of two regions: an Ohmic region at low current densities, and nonlinear regions having negative differential resistance (NDR) at moderate and higher current densities. The nonlinear behavior of the I-V curves was studied at different ambient temperatures. The sample temperature and the threshold voltage of the NDR region were also examined as a function of the ambient temperature. We detected that the investigated samples exhibit threshold-type switching and propose that the switching mechanism has an electronic origin. [ABSTRACT FROM AUTHOR]