Experimental study and simulations on two different avalanche modes in trench power MOSFETs.

The avalanche behaviour of a new trench power MOSFET was investigated with the help of measurements and electro-thermal device simulation techniques. Two different destruction regimes were identified experimentally: energy-related destruction and current-related destruction. Possible simulation approaches to account for the different effects were proposed. The corresponding results agreed well with measurements. Furthermore, the simulations qualitatively predicted the experimental results' dependence of avalanche behaviour on design parameters. [ABSTRACT FROM AUTHOR]