Substrate temperature changes during molecular beam epitaxy growth of GaMnAs.

Our band gap spectroscopy measurements reveal a remarkably big increase of the substrate temperature during the low-temperature molecular beam epitaxy growth of GaMnAs layers. With the help of numerical simulations we explain the effect as a consequence of changing absorption/emission characteristics of the growing epilayer. We discuss possibilities for reducing the substrate temperature variations during the growth. [ABSTRACT FROM AUTHOR]