Self-organization of 6H-SiC (0001) surface under keV ion irradiation.

In the present study, we have investigated the temporal evolution of 6H-SiC (0001) surface under 100 keV Ar⁺ ion irradiation at oblique incidence (θ=60°). The topographical changes introduced by ion beam were examined using scanning force microscopy, and it is demonstrated that while at short time scales, surface morphology is dominated by dots with average diameter of 30 nm, periodic height modulations or ripples emerge at the later time scales. Existing theories of ripple formation have been invoked to explain various features of the observed ripples. Ripple structures developed on a physically stable material such as SiC are expected to show very small time degradation and therefore, would be more advantageous for various technological applications as compared to those grown on conventional semiconductors such as Si, GaAs, InP, etc. [ABSTRACT FROM AUTHOR]