Superhydrophobic modification of gate dielectrics for densely packed pentacene thin film transistors.

Pentacene organic thin film transistors (OTFTs) with low-k and high-k hybrid gate dielectrics by CF₄ plasma treatment exhibited excellent device performance with field effect mobilities (maximum 1.41 cm²/V s), a low threshold voltage of +1 V, and on/off current ratios of 10⁵ at -5 V gate bias. After CF₄ plasma treatment, fluorine atoms diffuse into the interior low-k polymer and eliminate ionic impurities which reduce the leakage current density and overall pentacene initial growth on the superhydrophobic surface is significantly improved. It seems apparent that proper surface treatment is desirable for higher quality pentacene film and improving the performance of OTFTs. [ABSTRACT FROM AUTHOR]