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Integration of microwave phase shifter with BST varactor onto TiO2/Si wafer.
- Source :
- Electronics Letters (Institution of Engineering & Technology); 7/5/2007, Vol. 43 Issue 14, p757-759, 3p, 1 Diagram, 1 Chart, 2 Graphs
- Publication Year :
- 2007
-
Abstract
- A BST ferroelectric thin-film microwave phase shifter with interdigital capacitors on TiO2/Si substrate is presented. The interdigital capacitors have 230 µm signal width, 100 µm signal to ground gap, and 10 µm finger gap. The device, with phase shifts of 142° and FoM of 107.3°/dB applied voltage of 50 V at 16 GHz, has been realised. The TiO2 buffer layer grown by ALD enables successful integration of BST-based microwave tunable devices with Si wafer. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00135194
- Volume :
- 43
- Issue :
- 14
- Database :
- Complementary Index
- Journal :
- Electronics Letters (Institution of Engineering & Technology)
- Publication Type :
- Academic Journal
- Accession number :
- 25638852
- Full Text :
- https://doi.org/10.1049/el:20070448