H+ ion-implantation energy dependence of electronic transport properties in the MeV range in n-type silicon wafers using frequency-domain photocarrier radiometry.

MLA

Wang, Chinhua, et al. “H+ Ion-Implantation Energy Dependence of Electronic Transport Properties in the MeV Range in n-Type Silicon Wafers Using Frequency-Domain Photocarrier Radiometry.” Journal of Applied Physics, vol. 101, no. 12, June 2007, p. 123109. EBSCOhost, https://doi.org/10.1063/1.2748868.

APA

Wang, C., Mandelis, A., Tolev, J., Burchard, B., & Meijer, J. (2007). H+ ion-implantation energy dependence of electronic transport properties in the MeV range in n-type silicon wafers using frequency-domain photocarrier radiometry. Journal of Applied Physics, 101(12), 123109. https://doi.org/10.1063/1.2748868

Chicago

Wang, Chinhua, Andreas Mandelis, Jordan Tolev, Bernd Burchard, and Jan Meijer. 2007. “H+ Ion-Implantation Energy Dependence of Electronic Transport Properties in the MeV Range in n-Type Silicon Wafers Using Frequency-Domain Photocarrier Radiometry.” Journal of Applied Physics 101 (12): 123109. doi:10.1063/1.2748868.