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Interband light absorption and Pauli blocking in InAs/GaAs quantum dots covered by InGaAs quantum wells.

Authors :
L E Vorobjev
N K Fedosov
V Yu Panevin
D A Firsov
V A Shalygin
M I Grozina
A Andreev
V M Ustinov
I S Tarasov
N A Pikhtin
Yu B Samsonenko
A A Tonkikh
G E Cirlin
V A Egorov
F H Julien
F Fossard
A Helman
Kh Moumanis
Source :
Semiconductor Science & Technology; Jul2007, Vol. 22 Issue 7, p814-818, 5p
Publication Year :
2007

Abstract

Spectra of interband light absorption in InAs/GaAs quantum dots covered by InGaAs quantum wells were investigated experimentally and theoretically. The main peaks in the spectra are connected with electron transitions between ground and excited quantum dot states. The value of an interband absorption cross section was determined. Interband light absorption was also studied under the conditions of interband optical pumping. The photoinduced change of interband absorption for polarized light was studied as a function of interband optical pump intensity and the light amplification was found. The change of absorption, including light amplification, is caused by the occupation of quantum dot states with non-equilibrium electrons and holes. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
02681242
Volume :
22
Issue :
7
Database :
Complementary Index
Journal :
Semiconductor Science & Technology
Publication Type :
Academic Journal
Accession number :
25589063
Full Text :
https://doi.org/10.1088/0268-1242/22/7/025