Improved long-term thermal stability of InGaN/GaN multiple quantum well light-emitting diodes using TiB2- and Ir-based p-Ohmic contacts.

MLA

Stafford, L., et al. “Improved Long-Term Thermal Stability of InGaN/GaN Multiple Quantum Well Light-Emitting Diodes Using TiB2- and Ir-Based p-Ohmic Contacts.” Applied Physics Letters, vol. 90, no. 24, June 2007, p. 242103. EBSCOhost, https://doi.org/10.1063/1.2748306.

APA

Stafford, L., Voss, L. F., Pearton, S. J., Wang, H. T., & Ren, F. (2007). Improved long-term thermal stability of InGaN/GaN multiple quantum well light-emitting diodes using TiB2- and Ir-based p-Ohmic contacts. Applied Physics Letters, 90(24), 242103. https://doi.org/10.1063/1.2748306

Chicago

Stafford, L., L. F. Voss, S. J. Pearton, H. T. Wang, and F. Ren. 2007. “Improved Long-Term Thermal Stability of InGaN/GaN Multiple Quantum Well Light-Emitting Diodes Using TiB2- and Ir-Based p-Ohmic Contacts.” Applied Physics Letters 90 (24): 242103. doi:10.1063/1.2748306.