Examination of Operation of PZT-Film-Si-Substrate Structures as Pyroactive Memory Elements.

The change of pyroelectric reaction sign observed in ferroelectric materials in consequence of polarization reversal has been considered for ferroelectric memory (FEM) elements with pyroelectric readout (FEMPyER). For PZT-film/Si-substrate structures, fabricated by RF sputtering, the mutually complementary pyroelectric and electrophysical characterization for examining FEM elements operation in FEMPyER mode was performed. Pyroelectric response (Uπ) - applied voltage (V) hysteresis Uπ-V-loops in the current Uπ 1 and voltage Uπ 2 modes, dielectric permittivity - V loops from Uπ 1/Uπ 2 ratio, charge Q-V-, current I-V- and capacity C-V- hysteresis loops are presented. The prospects of development of FEMPyER elements based on PZT-film/Si-substrate structures are considered. [ABSTRACT FROM AUTHOR]