Incorporation and stability of carbon during low-temperature epitaxial growth of Ge1-xCx (x<0.1)...

MLA

Yang, B. K., et al. “Incorporation and Stability of Carbon during Low-Temperature Epitaxial Growth of Ge1-XCx (X<0.1)..” Journal of Applied Physics, vol. 82, no. 7, Oct. 1997, p. 3287. EBSCOhost, https://doi.org/10.1063/1.365636.

APA

Yang, B.-K., Krishnamurthy, M., & Weber, W. H. (1997). Incorporation and stability of carbon during low-temperature epitaxial growth of Ge1-xCx (x<0.1).. Journal of Applied Physics, 82(7), 3287. https://doi.org/10.1063/1.365636

Chicago

Yang, B.-K., M. Krishnamurthy, and W. H. Weber. 1997. “Incorporation and Stability of Carbon during Low-Temperature Epitaxial Growth of Ge1-XCx (X<0.1)..” Journal of Applied Physics 82 (7): 3287. doi:10.1063/1.365636.