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Incorporation and stability of carbon during low-temperature epitaxial growth of Ge1-xCx (x<0.1)...
- Source :
- Journal of Applied Physics; 10/1/1997, Vol. 82 Issue 7, p3287, 10p, 13 Black and White Photographs, 9 Graphs
- Publication Year :
- 1997
-
Abstract
- Investigates the molecular beam epitaxy of Ge1-xCx alloys on Si(100). Use of in situ reflection high-energy electron diffraction, ex situ x-ray diffraction, transmission electron microscopy and Raman spectroscopy; Variation of carbon concentrations; Evaluation of the stability of thin films; Relationship with the microstructure's planar defect density.
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 82
- Issue :
- 7
- Database :
- Complementary Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 25162
- Full Text :
- https://doi.org/10.1063/1.365636