Cite
ANOMALOUS QUANTUM HALL RESISTANCE IN Al0.6Ga0.4As0.1Sb0.9/InAs QUANTUM WELL WITH TUNABLE CARRIER DENSITY.
MLA
Oto, K., et al. “ANOMALOUS QUANTUM HALL RESISTANCE IN Al0.6Ga0.4As0.1Sb0.9/InAs QUANTUM WELL WITH TUNABLE CARRIER DENSITY.” International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, vol. 21, no. 8/9, Apr. 2007, pp. 1419–23. EBSCOhost, https://doi.org/10.1142/S0217979207042938.
APA
Oto, K., Tamiya, S., Ishida, S., Okamoto, A., & Shibasaki, I. (2007). ANOMALOUS QUANTUM HALL RESISTANCE IN Al0.6Ga0.4As0.1Sb0.9/InAs QUANTUM WELL WITH TUNABLE CARRIER DENSITY. International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 21(8/9), 1419–1423. https://doi.org/10.1142/S0217979207042938
Chicago
Oto, K., S. Tamiya, S. Ishida, A. Okamoto, and I. Shibasaki. 2007. “ANOMALOUS QUANTUM HALL RESISTANCE IN Al0.6Ga0.4As0.1Sb0.9/InAs QUANTUM WELL WITH TUNABLE CARRIER DENSITY.” International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics 21 (8/9): 1419–23. doi:10.1142/S0217979207042938.