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Comparative Study On The Impact Of TiN And Mo Metal Gates On MOCVD-Grown HfO2 And ZrO2 High-κ Dielectrics For CMOS Technology.
- Source :
- AIP Conference Proceedings; 2007, Vol. 893 Issue 1, p293-294, 2p, 1 Chart, 2 Graphs
- Publication Year :
- 2007
-
Abstract
- We compare metal oxide semiconductor capacitors, investigating Titanium-Nitride and Molybdenum as gate materials, as well as metal organic chemical vapor deposited ZrO2 and HfO2 as high-κ dielectrics, respectively. The impact of different annealing steps on the electrical characteristics of the various gate stacks is a further issue. The positive effect of post metallization annealing in forming gas atmosphere as well as observed mid-gap pinning of TiN and Mo metal gates is presented. © 2007 American Institute of Physics [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 0094243X
- Volume :
- 893
- Issue :
- 1
- Database :
- Complementary Index
- Journal :
- AIP Conference Proceedings
- Publication Type :
- Conference
- Accession number :
- 24985554
- Full Text :
- https://doi.org/10.1063/1.2729883