A Nanowire Growth Technique Utilizing Focused Ion Beams.

Authors :: Schoendorfer, C.
Lugstein, A.
Bischoff, L.
Hyun, Y. J.
Pongratz, P.
Bertagnolli, E.
Source :: AIP Conference Proceedings; 2007, Vol. 893 Issue 1, p93-94, 2p, 2 Black and White Photographs
Publication Year :: 2007
Abstract: The impact of high energy Ga ion beams focused to diameters below 100nm on substrates such as Ge and Sb offers a new approach for the formation of nanowires. In contrast to several well-known processes for bottom-up fabrication of one-dimensional nanostructures, for this process neither additional temperature treatment nor any additional material component is needed. The resulting nanostructures are completely amorphous and show very homogeneous diameters in the range of 15 to 30nm. Lengths up to several microns can be achieved. © 2007 American Institute of Physics [ABSTRACT FROM AUTHOR]