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Superconductivity in doped cubic silicon: An ab initio study.

Authors :
Bourgeois, E.
Blase, X.
Source :
Applied Physics Letters; 4/2/2007, Vol. 90 Issue 14, p142511-1, 3p, 2 Graphs
Publication Year :
2007

Abstract

The authors study within a first-principles approach the band structure, vibrational modes, and electron-phonon coupling in boron-, aluminum-, and phosphorus-doped silicon in the diamond phase. Their results provide evidences that the recently discovered superconducting transition in boron-doped cubic silicon, with a transition temperature of ∼0.34 K, can be explained within a standard phonon-mediated mechanism. The importance of lattice compression and dopant related stretching modes are emphasized. The authors find that T<subscript>C</subscript> can be increased by one order of magnitude by adopting aluminum doping instead of boron. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00036951
Volume :
90
Issue :
14
Database :
Complementary Index
Journal :
Applied Physics Letters
Publication Type :
Academic Journal
Accession number :
24721264
Full Text :
https://doi.org/10.1063/1.2719663