On the nature of the carriers in ferromagnetic FeSe.

Authors :: Wu, X. J.
Shen, D. Z.
Zhang, Z. Z.
Zhang, J. Y.
Liu, K. W.
Li, B. H.
Lu, Y. M.
Yao, B.
Zhao, D. X.
Li, B. S.
Shan, C. X.
Fan, X. W.
Liu, H. J.
Yang, C. L.
Source :: Applied Physics Letters; 3/12/2007, Vol. 90 Issue 11, p112105-1, 3p, 3 Graphs
Publication Year :: 2007
Abstract: The optical and electrical properties of FeSe thin films are studied by both optical absorption and Hall measurements, which suggest that ferromagnetic FeSe is a metal instead of a semiconductor. No absorption gap is observed in the whole spectrum range from far infrared to ultraviolet. Temperature dependent transport measurement indicates that FeSe has a resistivity about 10<superscript>-3</superscript> Ω cm. It is also found that there is a transition from n-type conductivity at low temperatures to p-type conductivity at higher temperatures in FeSe, which is attributed to the two-carrier transport nature and the thermal activation of localized carriers in the thin film. [ABSTRACT FROM AUTHOR]