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Hole spin relaxation in neutral InGaAs quantum dots: Decay to dark states.

Authors :
Hall, K. C.
Koerperick, E. J.
Boggess, Thomas F.
Shchekin, O. B.
Deppe, D. G.
Source :
Applied Physics Letters; 1/29/2007, Vol. 90 Issue 5, p053109-N.PAG, 3p, 3 Graphs
Publication Year :
2007

Abstract

The authors report measurements of hole spin relaxation in neutral InGaAs quantum dots using polarization-dependent time-resolved photoluminescence experiments. The single-particle hole spin relaxation was isolated from other spin flip processes in the electron-hole system by detecting the initial transfer of population from optically active to dark states. The results indicate that electron-hole exchange interactions play a negligible role in the carrier spin kinetics, and are consistent with a mechanism of hole spin relaxation via phonon-mediated virtual scattering between confined quantum dot states. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00036951
Volume :
90
Issue :
5
Database :
Complementary Index
Journal :
Applied Physics Letters
Publication Type :
Academic Journal
Accession number :
23969101
Full Text :
https://doi.org/10.1063/1.2437063