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Hole spin relaxation in neutral InGaAs quantum dots: Decay to dark states.
- Source :
- Applied Physics Letters; 1/29/2007, Vol. 90 Issue 5, p053109-N.PAG, 3p, 3 Graphs
- Publication Year :
- 2007
-
Abstract
- The authors report measurements of hole spin relaxation in neutral InGaAs quantum dots using polarization-dependent time-resolved photoluminescence experiments. The single-particle hole spin relaxation was isolated from other spin flip processes in the electron-hole system by detecting the initial transfer of population from optically active to dark states. The results indicate that electron-hole exchange interactions play a negligible role in the carrier spin kinetics, and are consistent with a mechanism of hole spin relaxation via phonon-mediated virtual scattering between confined quantum dot states. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 90
- Issue :
- 5
- Database :
- Complementary Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 23969101
- Full Text :
- https://doi.org/10.1063/1.2437063