High field-effect mobility ZnO thin-film transistors with Mg-doped Ba0.6Sr0.4TiO3 gate insulator on plastic substrates.

The authors report on the influence of Mg acceptor doping on the markedly reduced leakage current characteristics (<5×10^-8 A/cm² at 2 MV/cm) of Ba_0.6Sr_0.4TiO₃ thin films. The suitability of room temperature deposited Mg-doped Ba_0.6Sr_0.4TiO₃ films as gate insulators for low-voltage ZnO thin-film transistors (TFTs) (<6 V) was investigated. All room temperature processed ZnO-TFTs on plastic substrates exhibited a high field-effect mobility of 16.3 cm²/V s and a current on/off ratio of 6.4×10⁴. The threshold voltage and subthreshold swing were 2.8 V and 400 mV/decade, respectively. [ABSTRACT FROM AUTHOR]