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Electrical Properties of nMOSFETs Using the NiSi:Yb FUSI Electrode.
- Source :
- IEEE Electron Device Letters; Feb2007, Vol. 28 Issue 2, p154-156, 3p, 1 Diagram, 5 Graphs
- Publication Year :
- 2007
-
Abstract
- In this letter, nMOSFETs using a NiSi:Yb fully suicide (FUSI) electrode are demonstrated for the first time. We report that the integration of NISI:Yb FUSI into our reference n-FETs with the respective SiON/HfSiON gate dielectrics results in a V<subscript>t</subscript> reduction from 0.55/0.52 down to 0.30/0.43 V, without degradation of the gate dielectric integrity, channel interface states, and long channel devices mobility. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 07413106
- Volume :
- 28
- Issue :
- 2
- Database :
- Complementary Index
- Journal :
- IEEE Electron Device Letters
- Publication Type :
- Academic Journal
- Accession number :
- 23886331
- Full Text :
- https://doi.org/10.1109/LED.2006.889259