InGaAs/GaAs QD-based electro-optic modulator with over 100 nm bandwidth at 1.55 µm.

Authors :: Moreau, G.
Martinez, A.
Cong, D.-Y.
Merghem, K.
Miard, A.
Lemaitre, A.
Voisin, P.
Ramdane, A.
Source :: Electronics Letters (Institution of Engineering & Technology); 1/18/2007, Vol. 43 Issue 2, p124-125, 2p, 1 Diagram, 3 Graphs
Publication Year :: 2007
Abstract: The potential of an InGaAs/GaAs quantum-dot-based phase modulator for broadband (>100 nm) applications at 1.55 µm is demonstrated. A ∼35% enhancement of the phase variation (Vπ ∼ 3.5 V for 4 mm-long devices) is achieved compared to that obtained with bulk GaAs waveguides. [ABSTRACT FROM AUTHOR]

Subjects :: QUANTUM dots
QUANTUM electronics
ELECTROOPTICS
WAVEGUIDES
BANDWIDTHS
BROADBAND communication systems

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