Contactless electroreflectance of InAs/In0.53Ga0.23Al0.24As quantum dashes grown on InP substrate: Analysis of the wetting layer transition.

MLA

Kudrawiec, R., et al. “Contactless Electroreflectance of InAs/In0.53Ga0.23Al0.24As Quantum Dashes Grown on InP Substrate: Analysis of the Wetting Layer Transition.” Journal of Applied Physics, vol. 101, no. 1, Jan. 2007, p. 013507–N.PAG. EBSCOhost, https://doi.org/10.1063/1.2405233.

APA

Kudrawiec, R., Motyka, M., Misiewicz, J., Somers, A., Schwertberger, R., Reithmaier, J. P., Forchel, A., Sauerwald, A., Kümmell, T., & Bacher, G. (2007). Contactless electroreflectance of InAs/In0.53Ga0.23Al0.24As quantum dashes grown on InP substrate: Analysis of the wetting layer transition. Journal of Applied Physics, 101(1), 013507–N.PAG. https://doi.org/10.1063/1.2405233

Chicago

Kudrawiec, R., M. Motyka, J. Misiewicz, A. Somers, R. Schwertberger, J. P. Reithmaier, A. Forchel, A. Sauerwald, T. Kümmell, and G. Bacher. 2007. “Contactless Electroreflectance of InAs/In0.53Ga0.23Al0.24As Quantum Dashes Grown on InP Substrate: Analysis of the Wetting Layer Transition.” Journal of Applied Physics 101 (1): 013507–N.PAG. doi:10.1063/1.2405233.