Characterization and optimization of a P-channel poly(o-methoxyaniline) based thin film transistor.

Poly(o-methoxyaniline) based thin film organic transistors (OTFT’s) have been fabricated on a variety of dielectrics: SiO₂, polyethylene, and polyvinylidene fluoride trifluoroethylene. Resulting inverted gate OTFT’s were found to be P channel with Au contacts. The mobility was measured to be around 10^-3 cm² V^-1 s^-1 for as-deposited thin film OTFT structures but could be improved by an order of magnitude by doping, annealing, and decreasing the static dielectric constant of the gate dielectric. [ABSTRACT FROM AUTHOR]